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標題: Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits [打印本頁]
作者: semico_ljj    時間: 2010-6-25 08:49 AM
標題: Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits
Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits
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作者: semico_ljj    時間: 2010-6-25 08:50 AM
Abstract -- The diode operated in forward-biased condition has5 \/ o+ U) e; a: D" g
been widely used as an effective on-chip ESD protection device at
4 \) D6 q# j) K; ]- gGHz RF and high-speed I/O pads due to the small parasitic' {% e# c; R- ~. I% H1 Z; O+ h
loading effect and high ESD robustness in CMOS integrated
; c; i1 c3 l6 i$ M, Fcircuits (ICs). This work presents new ESD protection diodes3 ?$ D, w. i0 Z8 H! d/ \
realized in the octagon, waffle-hollow, and octagon-hollow layout) o9 K% I6 _3 a# t3 o/ b
styles to improve the efficiency of ESD current distribution and' e5 J* T$ Q2 K' h' I% P* C) l1 t
to reduce the parasitic capacitance. The new ESD protection' l' [9 w8 T: W2 K& z$ a
diodes can achieve smaller parasitic capacitance under the same
4 Q- M# ^# d: U8 LESD robustness level as compared to the waffle diode. Therefore,
3 I6 K  v, V2 @' r. pthe signal degradation of GHz RF and high-speed transmission. z* }" A7 z# o2 V
can be reduced due to smaller parasitic capacitance from the new
6 D& B+ |* L! M+ @) m. ]8 l# |5 e4 \proposed diodes.
作者: xp212125o    時間: 2010-7-28 01:45 PM
看起來有幫助
  s: A( A' Q% ~9 f感謝分享
  l7 }! o8 u" q- A先下載來看看9 n; D/ Q' m" [& H
thank you ~
作者: linyuejing    時間: 2010-8-21 09:55 AM
下載來看看
1 R9 ~, _: t' V下載來看看' m, k) |! ^$ C! T8 b$ B+ }
下載來看看9 m" R, ]9 ?/ ?/ G) M  c; R
下載來看看
# e6 c4 u# d  g" K3 P+ y應該有幫助
; i; S& g4 Y' m. @1 D+ [% m謝謝囉
作者: caesarxl    時間: 2010-8-24 02:58 PM
谢谢楼主分享，非常感谢
作者: oika_51    時間: 2010-9-10 03:49 PM
看起來有幫助
, H1 I6 j1 A) r" ~感謝分享
作者: linger809    時間: 2010-9-11 05:00 PM
Abstract -- The diode operated in forward-biased condition has2 o# ^6 U, I. ~1 i% O# j0 s4 z
been widely used as an effective on-c ...( l" N1 U$ E) K' q* A( U$ c
semico_ljj 發表於 2010-6-25 08:50 AM

4 S/ F' o% U2 `. N; S
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不知道这种形式的ＩＯ有没有经过测试，实际的效果和预想的有多少的差别，thanks!
作者: oscargo    時間: 2011-6-7 05:02 PM
正為ESD耐受度傷腦筋----
作者: zhifj86    時間: 2012-3-8 02:19 PM
thank you very much for your sharing
作者: sslin    時間: 2021-8-13 05:43 PM
謝謝大大的分享~~知識因分享而壯大！
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~只有站在巨人的肩膀上才不會被食人族吃了!



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