"Smart" TDDB Algorithm for Investigating Degradation in High-k Gate Stacks Under Constant Voltage Stress (English Presentation) Sign up for this event
| 10:00 AM | Beijing/Taipei time | |
| 10:00 AM | Singapore/Kuala Lumpur/Manila time | |
| 11:00 AM | Seoul time | |
| 12:00 Noon | Sydney time |
A new "smart" algorithm is developed for automatic monitoring of gate dielectric during Constant Voltage Sweep stressing with interlaced characterization using Stress Induced Leakage Current (SILC). In this approach, SILC data is collected automatically based on changes in measured stress current, and/or time intervals. This fully automated test was implemented using the Keithley 2600 Series SourceMeter, and applied to study degradation of the transistor TiN/HfO2 gate stacks.
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With more than 60 years of measurement expertise, Keithley Instruments has become a world leader in advanced electrical test instruments and systems from DC to RF (radio frequency). Our products solve emerging measurement needs in production testing, process monitoring, product development, and research. Our customers are scientists and engineers in the worldwide electronics industry involved with advanced materials research, semiconductor device development and fabrication, and the production of end products such as portable wireless devices. The value we provide them is a combination of precision measurement technology and a rich understanding of their applications to improve the quality of their products and reduce their cost of test.
Project Engineer
SEMATECH Inc.
Dr. Steven Weinzierl
Application Manager
Keithley Instruments, Inc. ! Q: q; Q8 o9 f
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Cheong Siong Keat ' {" A T, v# ]
Senior Application Engineer
Keithley Instruments, Inc.
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