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Date March 21, 2007
Time 10:00 AM - 11:30 AM (Hong Kong Time)
Scope
This web seminar covers the fundamental concepts for measuring DC and RF characteristics of RF devices using pulsed-DC and -RF techniques. It is more practical than theoretical and is based on customer applications for which Keithley Instruments has developed solutions. A high-power 4H silicon carbide BJT is used as a test device example, and the applicability to MOSFET devices and RFIC amplifiers is discussed. A test system solution is shown with implementation techniques used to synchronize the bias and RF signals and measurements.
The presentation demonstrates how accurate DC and RF measurements can be made using these pulsed-signal techniques with short pulse widths and low duty cycles. Practical measurement tips making good measurements are also given.
Sponsor Keithley Instruments, Inc. www.keithley.com
With more than 60 years of measurement expertise, Keithley Instruments has become a world leader in advanced electrical test instruments and systems from DC to RF (radio frequency). Our products solve emerging measurement needs in production testing, process monitoring, product development, and research. Our customers are scientists and engineers in the worldwide electronics industry involved with advanced materials research, semiconductor device development and fabrication, and the production of end products such as portable wireless devices. The value we provide them is a combination of precision measurement technology and a rich understanding of their applications to improve the quality of their products and reduce their cost of test.
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