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發表於 2010-8-26 11:22:40
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參展學校 | 成功大學, 南台科技大學 | 指導教授 | 陳立祥, 唐經洲 | Tool名稱 | A 3D Visualization System to Facilitate the Metrology of nano-scale Lithography and TSV Process | 簡介 | Part1:1 v8 h7 e. |% \* B" Q& K
1 n7 X2 N0 \$ d- W& o2 |; E2 iAs semiconductor technology rapidly advances, lithography with high density and fine feature size has become the challenge for nanometer-scale integrated circuit fabrication.Unfortunately the optical proximity effects (OPE) will distort the developed patterns transferred from the mask patterns.
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We develop a system to enable the users to easily visualize the results of the simulation of the lithographic process and understand what the physical circuits may look like in the production line. With this visualization tool, the users can better understand the effect of OPE and how OPC should be applied to improve the yield of the IC production. As a result, the yield of the IC production can be increased.& O& L9 C1 }- L
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In the past, SoC (System on Chip) design methodology is always one of the best methods for circuit integration. Unfortunately, SOC process suffers from the design complexity and cost of process. 3D IC can provide the heterogeneous integration through vertical interconnection and high performance without using advanced process. Thus it is a promising technology for next generation system integration.
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In general, 3D IC is based on the technology of TSV (Through Silicon Via; TSV) and micro-bumps. Thus the quality of TSV is critical to the yield of 3D IC process. However due to the miniature of TSV and the nature of non-easy-probe, it is very difficulty to verify the topology and electricity of a TSV using traditional probing methodology during the process.
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Nevertheless, we can have the aerial images of a TSV through IR-microscope or SEM. Thus we can construct the 3D profile by constructing the image obtained from these microscopes. Furthermore, based on the marching cube object (MCO) and surface reconstruction technology, we can have more information about the topology |
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