hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs
: F* E+ |  p$ `. {( i1 ^/ W( v
, L' S3 W5 l* ?3 W% `% t, g; s+ q要怎麼定義用
plot LX??

請各位幫忙一下

小朱仔

直接下.op及.probe
7 r# r6 R  b3 L4 Y找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了

yalon

您得隨手  查一下 manual .
! m9 \: \' u: u0 ~: Z/ Z
' U$ @0 u& q7 x& vCgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.
3 X& h; D9 R0 p! u  P

For your reference.

0918429587

CAB_BS    LX28
CAB_BD   LX29
1 S+ h1 {: |! a$ \, S+ w1 A
: D; D) B7 K; w8 D0 U其他我找不到
$ b2 E* `, e' S+ cCgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
這是 CGDBO  CGSBO CBGBO
8 X) A$ l5 J9 g* x/ |& N- L; z& ^
不一樣

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
An example for your reference...
: p" \+ U) m: E. W4 q+ E: l  _. f
+ h' R2 ~) D; {----------------------------------------------------------------
& u# z1 G4 {( l! w7 b***** Gate Capacitance Plots *****
.lib 'your_component_model' lib_corner
( n0 o- g2 q2 v.temp operational_temp
' J' l8 y' k0 z1 d2 H( y.option dccap=1 post
5 s& A$ |& x/ f% {4 _m1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
vd n_drain gnd 0
vg n_gate gnd 5
; [/ G- d; W$ z7 Avb n_bulk gnd 0
.dc vd 0 5.0 0.1
.print   CGG=lx18(m1)
+        CGD=par('-lx19(m1)')
( j3 K  }5 ?6 I: m9 Q; b+        CGS=par('-lx20(m1)')
3 ]0 Y" O7 L- y! h0 T  a, h6 D+ J3 P+        CDG=par('-lx32(m1)')
+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
; z8 r& ]* D" z5 z5 E% _5 t.ends
2 E6 N3 z9 v: U2 I" @
----------------------------------------------------------------
4 F" W: k1 ^* T$ G% x' w. Q( ?" oSix capacitance are reported in the operating point printout
    cd_total = dQD/dVD
) I7 A1 z+ M1 `( m( a    cg_total = dQG/dVG
1 ^- `' ~" O4 Q    cs_total = dQS/dVS
    cb_total = dQB/dVB
* y) Z" v1 k$ J; w    cgs = -dQG/dVS
    cgd = -dQG/dVD
6 ~2 |/ _4 W) R* G+ |8 BThere capcitances include gate-drain, gate-source, and gate-bulk
! m  E/ {, ?; Toverlap capacitance, and drain-bulk and source-bulk diode capacitance.
# w5 Z$ c" D$ w: d% w4 s
CGG = dQg/dVG
CGD = -dQg/dVD
4 ~1 \% ]5 p7 M  h3 ]9 M+ m9 [5 uCDG = -dQD/dVG

The MOS element template printouts for gate capacitance are LX18~LX23
and LX32~LX34.
0 U8 v3 F3 L, m  N8 @+ _$ Z
# o; y  `9 ^6 mLX18(m) = dQG/dVGB = CGGBO
( N$ O- e9 t2 Z  z1 S- zLX19(m) = dQG/dVDB = CGDBO
LX20(m) = dQG/dVSB = CGSBO

  y3 m4 u6 S1 V) Q" JLX21(m) = dQB/dVGB = CGGBO
LX22(m) = dQB/dVDB = CGGBO
LX23(m) = dQB/dVSB = CGGBO
/ Q* h% P1 V' f6 Y1 l; d+ \# V
5 C0 m9 `. o5 }" S. O' M& O* uLX32(m) = dQD/dVG = CDGBO
; E6 |% q& {  p" K! y, NLX33(m) = dQD/dVD = CDDBO
. i0 ~8 S% ~4 Q; }  H, n" F/ D1 [. CLX34(m) = dQD/dVS = CDSBO
) e! n9 C+ S" T+ g
% I: k5 U  u, J2 sThe equation shown above is for an NMOS with source-bulk grounded
configuration. Refer to the user's manual for more detail ^^