hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs
. [1 I& l, c0 m5 w/ Q0 q6 ?3 L
; A, L% f( U4 j' H% K. g要怎麼定義用
2 z8 H. }* m/ p  h" F" U+ aplot LX??

請各位幫忙一下

小朱仔

直接下.op及.probe
; s3 d) l, D1 @! t找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了

yalon

您得隨手  查一下 manual .
" [  l: x: G8 \0 M& f0 C9 D6 B6 W
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.


For your reference.

0918429587

CAB_BS    LX28
& [0 k* X) y, M1 z" O0 ECAB_BD   LX29
8 l5 y! }8 ]* v( g" |) @$ m
其他我找不到
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
這是 CGDBO  CGSBO CBGBO
1 z. @; U: w8 {1 M- ?$ C
不一樣

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
7 n2 H" k- F5 G$ ^An example for your reference...

- V' V& Y4 @2 |+ g- M! z% H6 S. E----------------------------------------------------------------
8 e9 Z' g* w+ X/ ^6 J" n***** Gate Capacitance Plots *****
.lib 'your_component_model' lib_corner
.temp operational_temp
.option dccap=1 post
m1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
8 m+ ^4 l7 e7 d' D. K8 Tvd n_drain gnd 0
vg n_gate gnd 5
vb n_bulk gnd 0
9 e3 R7 g1 c! w0 T% h6 g.dc vd 0 5.0 0.1
.print   CGG=lx18(m1)
+        CGD=par('-lx19(m1)')
+        CGS=par('-lx20(m1)')
+        CDG=par('-lx32(m1)')
+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
.ends

7 k9 [, }4 R; O" N----------------------------------------------------------------
Six capacitance are reported in the operating point printout
    cd_total = dQD/dVD
4 @1 C. ^5 b2 F+ w& g3 l    cg_total = dQG/dVG
    cs_total = dQS/dVS
    cb_total = dQB/dVB
    cgs = -dQG/dVS
) Y9 x; r* d9 r3 `: J) r    cgd = -dQG/dVD
There capcitances include gate-drain, gate-source, and gate-bulk
overlap capacitance, and drain-bulk and source-bulk diode capacitance.

) w& i; n- ^7 v! HCGG = dQg/dVG
! x& e: Z5 M, j( g% E" o$ oCGD = -dQg/dVD
3 G7 m2 o( O' [: B  f+ ~& CCDG = -dQD/dVG
) H# V- [+ P! N$ t& o) s
! [$ m  J# l  PThe MOS element template printouts for gate capacitance are LX18~LX23
and LX32~LX34.
& Q' i( a/ @6 g, ~! d0 C8 O9 W
" W1 {6 s  ^7 Q2 A$ GLX18(m) = dQG/dVGB = CGGBO
  F% K  D. b+ a# n) k4 PLX19(m) = dQG/dVDB = CGDBO
( Y# G7 |" d4 P2 h9 S/ v- mLX20(m) = dQG/dVSB = CGSBO
/ z3 e; l, E& P' {
) [3 l. E& k+ v! p  i" k2 sLX21(m) = dQB/dVGB = CGGBO
LX22(m) = dQB/dVDB = CGGBO
4 b  M6 T8 }# q. b8 G% _0 [LX23(m) = dQB/dVSB = CGGBO
3 _8 r9 k( m+ t: G
LX32(m) = dQD/dVG = CDGBO
LX33(m) = dQD/dVD = CDDBO
# ?$ s+ ~$ p- ^1 u6 iLX34(m) = dQD/dVS = CDSBO

$ |1 ~8 G7 d; t+ u, ?8 iThe equation shown above is for an NMOS with source-bulk grounded
configuration. Refer to the user's manual for more detail ^^