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我在之前的公司有lay過double guard rings,內圍是用PTHIN guard rings,外圍是用
: L6 E; A3 @/ fNwell+NTHIN(甜甜圈結構).主要就是用來防止noise,那時是圍在Oscillator外圍.
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6 e# o" ~" A: K% [* KDummy的話,不知道你指的是那部份?? 引述一篇paper " SmartExtract:Accurate Capacitance
3 y2 C& u# v3 k2 ~* {# d5 GExtraction for SOC", 這裡提到的dummy是指layout完成後,在每層layer空曠處,補上同一layer
# Y9 X3 v# {5 ?! U7 Sdummy, 為的是在CMP process時,有較佳的均勻性:
+ f D+ e' X' M$ xDummy(or fill) metal is introduced in the interconnect process flow to enable uniform! [) t( H3 _8 k
thickness control in the CMP process. Dummy metal needs to be treated as floating metal 4 l- H U# v& S& }" l
unless it is intentionally connected to a constant potential. Floating dummy metal
8 @& d! g: N: I( q2 G" O+ iessentially acts as a capacitance divider.5 @& r& ~0 p) |% ?0 [& p
另外有一種dummy, 之前我在做analog layout時,會在需做match的mos旁,故意lay半顆或整顆. \! e4 |! k/ @' ^5 x0 N" T+ l, j
mos,除了你寫的那些原因,我想是因為實體mos的邊緣不見得是像layout般的四方形(what you draw is not what you get),可能是梯形或不規則多邊形,製程上很難做到如此完美,所以為了確保
' ~' l" Z! }' i# T! p6 {$ V1 Y4 v主要的mos的完整性及對稱性,在mos旁再多加dummy mos(不要讓主要mos成為最邊緣的部
6 b* [% t# V. H" }7 m份).以上是我自己的想法,歡迎各位先進指教 |
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