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我在之前的公司有lay過double guard rings,內圍是用PTHIN guard rings,外圍是用# [' f: l+ Z- z, f
Nwell+NTHIN(甜甜圈結構).主要就是用來防止noise,那時是圍在Oscillator外圍.
$ @2 @( U: f$ r3 N% P D6 Q+ Y; J* z! Y& z
Dummy的話,不知道你指的是那部份?? 引述一篇paper " SmartExtract:Accurate Capacitance 0 w: H4 y' _& X% U) z1 P0 t. {
Extraction for SOC", 這裡提到的dummy是指layout完成後,在每層layer空曠處,補上同一layer
- A) r4 h' \, u, v% [9 n4 X/ idummy, 為的是在CMP process時,有較佳的均勻性:
) l6 n9 L- c- k3 q0 b) GDummy(or fill) metal is introduced in the interconnect process flow to enable uniform8 K- Q# b: r, L
thickness control in the CMP process. Dummy metal needs to be treated as floating metal
( v0 r" [2 [9 ~unless it is intentionally connected to a constant potential. Floating dummy metal
' ?+ }, q3 c' K& X5 \4 r( j# Oessentially acts as a capacitance divider.5 J4 W+ Y- u4 ~
另外有一種dummy, 之前我在做analog layout時,會在需做match的mos旁,故意lay半顆或整顆) B( R& m R# M) Z' L
mos,除了你寫的那些原因,我想是因為實體mos的邊緣不見得是像layout般的四方形(what you draw is not what you get),可能是梯形或不規則多邊形,製程上很難做到如此完美,所以為了確保
. H& N/ e7 n k: |2 i- O8 n N主要的mos的完整性及對稱性,在mos旁再多加dummy mos(不要讓主要mos成為最邊緣的部
* A1 m7 |/ b3 j- Q" V2 Q/ W份).以上是我自己的想法,歡迎各位先進指教 |
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