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由於DRAM Memory之技術與產品應用(如Low voltage, high speed, high bandwidth等)進展極快,有許多機會與挑戰值得深入瞭解,有鑑於此,我們特別邀請在國際Memory產業界知名專家:沈武博士及國內相關業者專家於2月14日同針對先進記憶體、構裝與產品應用等議題作深入探討,歡迎相關人士或對此課程有興趣者報名參加! ) ?# H1 E) P# V6 x5 b5 Z+ F% ?
8 I I, M' G3 ^" q主 題:先進記憶體技術產品應用發展現況及3DIC整合機會
9 }. ^$ H: q2 U* F& v: Z) C% L指導單位:經濟部工業局
?9 ]( q, e, S- p2 f. r& V主辦單位:工研院資通所/電光所 ' `, x" l9 y1 ~+ _2 M( c) i: Y5 V
時 間:100年2月14日(星期一) 9:30~12:30 (9:10開始報到)
" Z& ?# x* s( T5 M2 k/ R地 點:工研院中興院區51館2B會議室(新竹縣竹東鎮中興路四段195號) ) u6 n. C" @4 [0 A
講 師:沈武 博士, Principal Engineer, LSI Corporation, USA $ w0 B* P$ E" j9 `3 E1 t7 e
◎ JC42.3B Letter Committee Vice Chair at JEDEC
) N3 d5 L5 D! }2 r% C◎ Sr. Application Marketing Manager, Product Definition and Innovations at Qimonda USA - n1 U2 ]) E0 X2 u
◎ Application Marketing Manager at Infineon Technologies.
, ~3 w( [6 y' r7 ?9 p6 }, m: @) X◎ Lead System Design Engineer at HAL Computer Systems 9 R E% P# W. j$ i0 d0 s; ^
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議 程: 2 R4 @7 N3 j2 ^- t% b; O2 C
DDR Memory (I) % Y) c& i V5 _
●Highlight of DDR3 # T- J, m1 ]$ Q* @: p/ P* s" Y
●Power Ramping, Reset ; |2 b1 c/ W, M9 ^/ X
●Address/Command line structure and fly-by; Read and Write leveling
6 a! c q. a8 \& C( UDDR Memory (II) 3 Q. G6 q. b2 Q/ p- g( k. f. [
●Data Path ODT and Dynamic ODT Usage
$ ]: S4 @! ~/ ?& ]3 O; }●Challenges on DDR3 derivatives: lower voltage (DDR3L, 1.35V) and higher speed (DDR3E, 1866/2133Mbps) |
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