5 [) d$ {% ?* u$ E" r, v4 b7 {Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology* m8 R1 O! f8 V K6 V
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Abstract—Cable discharge events (CDEs) have been found* v2 {: E8 ~) A" L
to be the major root cause of inducing hardware damage on 6 h: o& ~3 F/ y$ h Ethernet ICs of communication interfaces in real applications. Still,2 [) l' L/ [6 S3 ]; p6 ?% R
there is no device-level evaluation method to investigate the ro, j0 X Z Y& I" s& G! }0 f
bustness of complementary metal–oxide–semiconductor (CMOS)/ y: }* X/ u* b' m! V
devices against a CDE for a layout optimization in silicon chips.